| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672301 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
The purpose of this work is to investigate the dynamic behaviour of Fowler-Nordeim injection through EEPROM tunnel oxides, in conditions representative of the standard device operation. An experimental procedure based on the acquisition of current transients induced by trapezoidal-shape short voltage pulses is presented. It is then used to evidence a rapid positive charging and to determine some of its properties. Implications regarding the device behaviour and modelling are finally discussed.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
N. Baboux, C. Plossu, P. Boivin,