Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9672307 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
High-k gate dielectric La2O3 thin films have been deposited on Si(1 0 0) substrates by molecular beam epitaxy (MBE). Al/La2O3/Si metal-oxide-semiconductor capacitor structures were fabricated and measured. A leakage current of 3 Ã 10â9 A/cm2 and dielectric constant between 20 and 25 has been measured for samples having an equivalent oxide thickness (EOT) 2.2 nm. The estimated interface state density Dit is around 1 Ã 1011 eVâ1 cmâ2. EOT and flat-band voltage were calculated using the NCSU CVC program. The chemical composition of the La2O3 films was measured using X-ray photoelectron spectrometry and Rutherford backscattering. Current density vs. voltage curves show that the La2O3 films have a leakage current several orders of magnitude lower than SiO2 at the same EOT. Thin La2O3 layers survive anneals of up to 900 °C for 30 s with no degradation in electrical properties.
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Authors
V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele,