| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672308 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
SrTiO3 thin films (STO), were deposited on Si(100) covered by 2 nm of SiO2, at different temperatures from 450 °C to 850 °C using liquid injection MOCVD, the bimetallic precursor being Sr2Ti2(OiPr)8(tmhd)4. The STO films were analysed by XRD, FTIR, SIMS and TEM. An amorphous layer was observed between STO and SiO2/Si. The nature and thickness of the interlayer were determined, as well as the most favourable conditions for a good quality crystalline STO film, and a reduced interlayer.
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Authors
A. Sibai, S. Lhostis, Y. Rozier, O. Salicio, S. Amtablian, C. Dubois, J. Legrand, J.P. Sénateur, M. Audier, L. Hubert-Pfalzgraff, C. Dubourdieu, F. Ducroquet,