| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672314 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
The paper reports on electrical and optical investigations performed on HfO2 high-k films deposited by Metal-organic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO2 and the silicon substrate, which can be optically modelled as a mixture of Si and SiO2; this information is further used in the assessment of the electrical measurements. Hysteresis effects have been observed in the Capacitance-Voltage (C-V) measurements for the as-deposited sample as well as the annealed samples. For the samples with large hysteresis, Poole-Frenkel (PF) conduction is the most likely dominant conduction mechanism. The energy of dominant trap level was found to be â¼0.7Â eV.
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Authors
Y. Lu, O. Buiu, S. Hall, P. K. Hurley,