Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS

A deep analysis of the intrinsic junction and surface currents in power vertically diffused MOS devices with sub-micrometer channel length and thin gate oxide has been carried on after a typical reliability high temperature reverse bias (HTRB) stress. A reference set of gated diodes has also been examined in order to better understand the onset and evolution of post-stress leakage degradation. A comparison among complete MOSs, single body diodes and enriched diodes allows to highlight the role played by the point defectivity both at gate interface and in the bulk silicon close to the junction surface. We found that the typical interface defects involved in the leakage degradation are shallow traps and can be de-populated simply by a thermally activated mechanism. More specifically, the main degradation mechanism relies to band-defect-band tunneling localized at the surface drain/body junction where an intrinsic n-i-p region evolves due to a bird's beak lateral profile of the body diffusion. We have demonstrated that the most important contribution to the activation of the precursor defect sites is given by the transverse electrical field that develops just below the SiO2/Si interface within the n-i-p region during the stress.