Bipolar SCR ESD devices

This paper presents a review of the recent studies based on the concept of Bipolar Silicon Controlled Rectifier (BSCR) devices across a variety of BiCMOS technologies. Examples of both BSCR design and application are presented, ranging from a 0.25 μm Si-Ge process with a shallow epi-layer, up to 250 V bipolar process. The BSCR device characteristics are discussed based on both 2-D physical process and device simulation and by the test structure ESD characterization.