Low voltage SILC and P- and N-MOSFET gate oxide reliability

N-MOSFETs and P-MOSFETs gate reliability under constant voltage stresses are compared. Gate current variation, in depletion regime, has been used to monitor the oxide reliability. It has been shown that, at low voltages, negative stresses are more degrading for the same injected charge than positive ones for both P- and N-MOSFET and that the time to breakdown, at operating voltages, is smaller in P-MOSFET than in N-MOSFET.