| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9760295 | Journal of Power Sources | 2005 | 5 Pages |
Abstract
The cause of the improvement was examined mainly with impedance spectroscopy analysis (EIS). EIS spectra revealed that both the film resistance and the charge-transfer resistance were decreased remarkably by these surface modifications. Among the three modification procedures, MOT revealed the best improving effect. By comparing the EIS data with the results obtained from the double layer capacity measurement, we concluded that the major cause of the increase in the reaction rate is the activation of the reaction site.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Tsutomu Takamura, Shusuke Eguchi, Junji Suzuki, Osamu Omae, Kyouichi Sekine,