Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9760335 | Journal of Power Sources | 2005 | 4 Pages |
Abstract
Vanadium pentoxide thin films have been prepared by reactive DC magnetron sputtering from a vanadium metal target without annealing posttreatment. XRD, Raman and electrochemical experiments on 800 nm thin films show a high crystallinity of the deposits. Chronopotentiometric measurements performed in the two voltage range 3.8-2.8 and 3.8-2.15 V have demonstrated the promoting effect of the h 0 0 preferred orientation of V2O5 films in terms of polarization, kinetics and rate capability. The same reproducible deposition method is successfully applied to get films thicker than 1 μm in order to optimize the specific capacity. Effective high specific capacities can be then obtained with films 2.4 μm thick tested at high constant current density (100 μA cmâ2): a stable capacity of 75 μAh cmâ2 is available over 100 cycles in the 3.8-2.8 V potential range and 130 μAh cmâ2 are still recovered in the range 3.8-2.15 V. These results indicate a promising cycling behaviour can be expected with thick films exhibiting a preferred orientation corresponding to V2O5 planes perpendicular to the substrate.
Related Topics
Physical Sciences and Engineering
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Electrochemistry
Authors
C. Navone, J.P. Pereira-Ramos, R. Baddour-Hadjean, R. Salot,