Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9760363 | Journal of Power Sources | 2005 | 5 Pages |
Abstract
To improve the electrochemical performance of Si-Zr thin films, we have investigated the effect of the replacement of Zr by Ag in the films. The Si-Zr-Ag thin films were prepared by co-sputtering from each pure target and then analyzed for structure, composition and electrochemical performance. The Ag-containing films show a plateau like region in the charge-discharge profiles, while the steep slopes are seen in the Si-Zr film. The Si-Zr-Ag films also show high capacity and good rate capability compared to the Si-Zr film, maintaining a comparable capacity retention with cycles. The improved electrochemical performance of Si-Zr-Ag films is attributed to the highly dispersed Si phase in the film, which was induced by formation of Zr-Ag bonds, and the lower impedance exerted by Ag alloying.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Kwan-Soo Lee, Young-Lae Kim, Sung-Man Lee,