Two dimensional analytical modeling for asymmetric 3T and 4T double gate tunnel FET in sub-threshold region: Potential and electric field

In this paper a two dimensional analytical model of channel potential and electric field for an asymmetric and symmetric double gate three-terminal (3T) and four-terminal (4T) silicon n-tunnel field effect transistor (Si-nTFET) device in sub-threshold region, without surface accumulation or inversion, is presented. Since the modeling has been done in subthreshlod regime operation, no Quantum Mechanical (QM) study has been taken. A very good agreement of analytically modeled results with the TCAD simulated results for the three-terminal (3T) and four-terminal (4T) Si-nTFET device was found. The model presented is based on the physics of the device. The modeling is for a 3T/4T asymmetric Tunnel FET and with appropriate changes in the device parameters we can also model for symmetric devices as well. The modeling scheme is thus quite robust.