Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10365227 | Microelectronics Journal | 2015 | 6 Pages |
Abstract
This paper presents two novel low-voltage level shifter designs: one based on cross-coupled PMOS transistors and the other using current mirror structure. These two level shifters are designed to address the problems of the existing state-of-the-art level shifters. Simulation at 65Â nm shows that both of the proposed level shifters achieve significantly better performance (up to 12Ã) and energy consumption (up to 8Ã) than the state-of-the-art level shifters with similar or less area consumption while operating from near-threshold to super-threshold region, making them optimal for level shifting in low-power systems with multiple scalable voltage domains.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jun Zhou, Chao Wang, Xin Liu, Minkyu Je,