Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10365494 | Microelectronics Journal | 2005 | 5 Pages |
Abstract
Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes.
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Authors
F. Marty, L. Rousseau, B. Saadany, B. Mercier, O. Français, Y. Mita, T. Bourouina,