Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10365684 | Microelectronics Reliability | 2014 | 7 Pages |
Abstract
The resistive switching characteristics of MIM structures based on Al2O3, are highly dependent on the surface roughness of the bottom electrode, the thickness of Al2O3 and the current compliance which limits the electron density flowing through both top/bottom electrodes. These devices are based on Al2O3 and fabricated on glass at 300 °C.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Joel Molina, Rene Valderrama, Carlos Zuniga, Pedro Rosales, Wilfrido Calleja, Alfonso Torres, Javier DeLa Hidalga, Edmundo Gutierrez,