Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11016448 | Microelectronics Reliability | 2018 | 5 Pages |
Abstract
Nowadays, the study of physical mechanisms that occur during Flash memory cell life is mandatory when reaching the 40â¯nm and beyond nodes in terms of reliability. In this paper we carry out a complete experimental method to extract the floating gate potential evolution during the cell aging. The dynamic current consumption during a Channel Hot Electron operation for a NOR Flash is a proper quantitative marker of the cell degradation. Here both drain and bulk currents are measured and monitored throughout the endurance tests. We coupled these characteristics with quasi-static measurements to correlate the cell degradation with an equivalent transistor. The final goal is to be able to split the physical effects of repetitive hot carrier and Fowler-Nordheim operations, typical of Flash memories, to extract the electrical parameters evolution on a simple equivalent transistor.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
V. Della Marca, J. Postel-Pellerin, T. Kempf, A. Regnier, P. Chiquet, M. Bocquet,