Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11016504 | Microelectronics Reliability | 2018 | 4 Pages |
Abstract
We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4â¯<â¯ÏB0â¯<â¯0.62â¯eV) was found to be lower than that of the good devices (ÏB0â¯=â¯0.79â¯eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.
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Authors
W.A. Sasangka, Y. Gao, C.L. Gan, C.V. Thompson,