Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11016523 | Microelectronics Reliability | 2018 | 4 Pages |
Abstract
In this paper, we propose the criteria of bias voltage from parasitic capacitance and demonstrate the criteria in an experiment with the present IGBT. The bias voltage criteria are theoretically predicted for the new generation IGBT based on the scaling principle. For safe switching, the required gate voltage bias is predicted to be â1.2â¯V or less for the present IGBTs andâ¯ââ¯6â¯V or less is required to completely cancel the gate noise voltage. From the IGBT design, the bias voltage of scaling IGBT requires â2â¯V to completely cancel the gate noise voltage.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Tsukuda, S. Abe, K. Hasegawa, T. Ninomiya, I. Omura,