| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971146 | Microelectronics Journal | 2017 | 7 Pages |
Abstract
A two-dimensional (2-D) analytical model for dual-material double gate (DMDG) Silicon-on-Nothing (SON) MOSFETs is developed to study the effect of variation of both the surface potential and threshold voltage on short channel effects (SCEs). Two dimensional (2-D) Poisson's equation with proper boundary conditions has been solved considering the parabolic potential approximation. The model includes the calculations of threshold voltage, electric field and subthreshold swing. The impact of variation of the device parameters such as gate length ratios, gate metal work functions on the performance of the device has been examined and the results are compared to that of dual-material double gate (DMDG) Silicon-on-Insulator (SOI) MOSFETs. The calculated results obtained have been validated with the numerical simulation data obtained from ATLAS, a 2-D device simulator from SILVACO.
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Authors
Pritha Banerjee, Anup Sarkar, Subir Kumar Sarkar,