Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971158 | Microelectronics Journal | 2017 | 7 Pages |
Abstract
Non-gated crossbar memory arrays are becoming strong candidates to replace the current gated arrays due to their much higher density. Sneak paths are the main problem in gate-less arrays. In this paper, we analyze a three reading multiport readout method for non-gated memory arrays, study its limitation versus the OFF/ON impedance ratio of the memory cell as well as the ratio between the 1Â s and 0Â s memory cells. We provide an accurate threshold that increases the noise margins that takes these factors into consideration and we also introduce an adaptive threshold that tracks the 1Â s and 0Â s density variations over time. Finally, we propose a sensing circuit that accumulates the three reading without the need for extra complicated circuitry to evaluate the read memory cell value.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Ahmed A.M. Emara, Mohamed M. Aboudina, Hossam A.H. Fahmy,