Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971409 | Microelectronics Reliability | 2017 | 8 Pages |
Abstract
We present experimental results of soft errors produced by proton and neutron irradiation of minimum-size six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories produced with 65Â nm CMOS technology using an 18Â MeV proton beam and a neutron beam of 4.3-8.5Â MeV. All experiments have been carried out at the National Center of Accelerators (CNA) in Seville, Spain. Similar soft error rate levels have been observed for both cell designs despite the larger area occupied by the 8T cells, although the trend for multiple events has been higher in 6T.
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Authors
D. Malagón, S.A. Bota, G. Torrens, X. Gili, J. Praena, B. Fernández, M. MacÃas, J.M. Quesada, Carlos Guerrero Sanchez, M.C. Jiménez-Ramos, J. GarcÃa López, J.L. Merino, J. Segura,