Estimating the Single-Event Upset sensitivity of a memory array using simulation

This paper proposes a straightforward methodology to estimate by simulation the Single-Event Upset (SEU) sensitivity of a memory array using open source and commercial codes. It is based on a four-step process including the calculation of the deposited energy distribution in sensitive volumes, the determination of a criterion for SEU triggering, the count of SEUs, and finally the SEU cross-section calculation. The approach is validated with neutron irradiation experiments performed on a 65 nm Static Random Access Memory (SRAM).