Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971598 | Microelectronics Reliability | 2017 | 6 Pages |
Abstract
We report a new non-destructive method to localize interconnection failures in 3-D devices. The scanning optical microscopy (SOM) technique is based on lock-in thermal laser stimulation (LI-TLS) and uses thermal waves to non-destructively map the current path in a 3-D device. We validate the method with test structures and show how the magnitude and phase of a propagating thermal wave may provide valuable 3-dimensional information on the failure location. We apply the technique on a short failed chain structure in a four level chip stack with an intensity modulated laser as a thermal wave injector and the structure under test as a detector. We confirm our results by physical failure analysis through a selective cross sectioning process.
Related Topics
Physical Sciences and Engineering
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Authors
K.J.P. Jacobs, T. Wang, M. Stucchi, M. Gonzalez, K. Croes, I. De Wolf, E. Beyne,