Article ID Journal Published Year Pages File Type
4971708 Microelectronics Reliability 2016 6 Pages PDF
Abstract
In this paper, characteristics of electrostatic discharge (ESD) protection devices operating under ESD stress and various ambient temperatures are investigated. The devices considered are a P +/NW diode and several silicon controlled rectifiers (SCRs) including Lateral SCR (LSCR), Modified Lateral SCR (MLSCR), No Snapback SCR (NS-SCR), Low Voltage Triggering SCR (LVTSCR), and P-Substrate Triggered SCR (PSTSCR) fabricated in a 0.35 μm BCD (Bipolar-CMOS-DMOS) technology. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) tester and the Signatone S1060 heating module, and the TLP I-V characteristics are analyzed in details. TCAD simulation is carried out and underlying physical mechanisms related to the effect of temperature on key ESD parameters are provided.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, , , , , , ,