| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971708 | Microelectronics Reliability | 2016 | 6 Pages |
Abstract
In this paper, characteristics of electrostatic discharge (ESD) protection devices operating under ESD stress and various ambient temperatures are investigated. The devices considered are a P +/NW diode and several silicon controlled rectifiers (SCRs) including Lateral SCR (LSCR), Modified Lateral SCR (MLSCR), No Snapback SCR (NS-SCR), Low Voltage Triggering SCR (LVTSCR), and P-Substrate Triggered SCR (PSTSCR) fabricated in a 0.35 μm BCD (Bipolar-CMOS-DMOS) technology. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) tester and the Signatone S1060 heating module, and the TLP I-V characteristics are analyzed in details. TCAD simulation is carried out and underlying physical mechanisms related to the effect of temperature on key ESD parameters are provided.
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Physical Sciences and Engineering
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Authors
Wei Liang, Aihua Dong, Hang Li, Meng Miao, Chung-Chen Kuo, Maxim Klebanov, Juin J. Liou,