Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4971817 | Microelectronics Reliability | 2016 | 4 Pages |
Abstract
Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical-mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical-mechanical hybrid stress experiment.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Dongseok Shin, Min Soo Bae, Ilgu Yun,