On the prediction of radiation-induced SETs in flash-based FPGAs

The present work proposes a methodology to predict radiation-induced Single Event Transient (SET) phenomena within the silicon structure of Flash-based FPGA devices. The method is based on a MonteCarlo analysis, which allows to calculate the effective duration and amplitude of the SET once generated by the radiation strike. The method allows to effectively characterize the sensitivity of a circuit against the transient effect phenomenon. Experimental results provide a comparison between different radiation tests data, performed with different Linear Energy Transfer (LET) and the respective sensitiveness of SETs.