| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4971880 | Microelectronics Reliability | 2016 | 7 Pages |
Abstract
In this paper the Electrostatic Discharge (ESD) capability of 200Â V Fast Recovery Epitaxial Diodes (FREDs) is analysed by means of suitable experiments, TCAD simulations and theoretical analyses. Different doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The newly fabricated devices show a remarkably high ESD capability without any significative loss in forward voltage drop and a reduction of the breakdown voltage that does not affect device rating.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Irace, L. Maresca, P. Mirone, M. Riccio, G. Breglio, L. Bellemo, R. Carta, M. Naretto, N. El Baradai, I. Para, N. Di Santo,