| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 538893 | Microelectronic Engineering | 2016 | 5 Pages |
•Dilute nitrides GaInNAs MQW structures were structurally and optically characterized.•Inhomogeneities of the GaInNAs QWs were taken into account during characterization.•The inhomogeneous composition of the GaInNAs QW layers is considered as a factor suppressing the PL intensity.•The modification of GaInNAs QW growth is proposed to improve the optical properties of the GaInNAs/GaAs MQW samples.•An improvement of the samples performance has been achieved due to electrons-holes wave functions overlap engineering.
In this work authors present the results of structural and optical characterization of the GaInNAs/GaAs MQW structures grown by AP-MOVPE. The growth conditions of quantum well layers were modified in order to counteract the phase segregation within GaInNAs QWs. Profiles of indium and nitrogen contents across the QWs layers were investigated by using HRXRD. The optical properties were investigated by applying photoluminescence spectroscopy. The inhomogeneous composition of the GaInNAs QW layers is considered as a factor suppressing the PL intensity due to change in the electron and holes wave functions distributions and tuning the transition's selection rules.
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