Fabrication of Graphene Field-effect Transistor with Field Controlling Electrodes to improve fT

In this letter, we report on the fabrication and DC/RF characterization of a novel Graphene Field-effect Transistor (GFET) with two additional contacts at the access regions. The additional contacts—Field Controlling Electrodes (FCEs), are capacitively coupled to the ungated access regions and independently biased to control the access resistance. The reduced access resistance resulted in an increased current-gain cutoff frequency (fT). The fabricated proposed device could be used for radio frequency (RF) applications.