| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 538896 | Microelectronic Engineering | 2016 | 4 Pages |
•Bevel edge termination is proposed for the SiC RSD device.•2D numerical model for SiC RSD with bevel edge termination is established.•Process of blade cut and ICP etching treatment is researched.
The termination structure for the pulsed power switch SiC RSD (reversely switched dynistor) is studied in this paper. According to the structure characteristics of SiC RSD, the positive-bevel edge termination is designed. By establishing the two-dimensional numerical model, the function that the positive-bevel can reduce the surface electric field is proved. Combined the surface electric field and the area loss, 45° positive angle is selected. According to the process characteristics of SiC material, bevel dicing together with ICP (inductively coupled plasma) etching treatment is chosen to fabricate the positive-bevel edge termination in experiment. The forward blocking voltage of about 600 V is acquired for the device. The optimal value for the etching depth is also discussed.
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