| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540269 | Integration, the VLSI Journal | 2009 | 6 Pages |
Abstract
A two-stage fully integrated power amplifier (PA) for the 802.11a standard is presented. The PA has been fabricated using UMC 0.18 μm CMOS technology. Measurement results show a power gain of 21.1 dB, a P1 dB of 23.2 dBm and a PSAT of 26.8 dBm. The PAE is 29% and it is kept high by means of several integrated inductors. These inductors present low-DC resistance and high Q characteristics. The inductors must include extra design considerations in order to withstand the high-current levels flowing through them, so that they have been called power inductors.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Héctor Solar, Roc Berenguer, Joaquín de No, Iñaki Gurutzeaga, Unai Alvarado, Jon Legarda,