| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541215 | Microelectronics Journal | 2016 | 6 Pages |
Abstract
Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are presented. The explicit expressions for threshold voltage and subthreshold swing make the model useful in the practical applications of the device.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Lirong Zheng,