Semi-empirical RF MOST model for CMOS 65 nm technologies: Theory, extraction method and validation

•Theory, extraction method and validation of accurate semi-empirical MOS model.•Method focused on nanometer technologies and radio-frequency applications.•The set of characteristics is extracted for 65-nm bulk CMOS RF transistors.•Model extracted from dc and noise electrical simulations as functions of gm/ID.•The model describes dc normalized current and all transconductances versus gm/ID.•The model relates normalized intrinsic capacitances versus gm/ID.•The model describes flicker and white noise parameters as function of gm/ID.•A set of CS-LNAs are designed and simulated electrically to validate the model.

This paper presents a simple but accurate semi-empirical model especially focused on 65 nm MOST (MOS transistor) technologies and radio-frequency (RF) applications. It is obtained by means of simple dc and noise simulations extracted over a constrained set of MOSTs. The fundamental variable of the model is the MOST transconductance to current drain ratio gm/IDgm/ID. Specifically it comprises the large signal DC normalized current, all conductances and transconductances and the normalized intrinsic capacitances. As well, noise MOST characteristics of flicker noise, white noise and MOST corner frequency description are provided. To validate the referred model the widely utilized cascoded common source low noise amplifier (CS-LNA), in 2.5 GHz and 5.3 GHz RF applications is picked. For the presented set of designs different gm/IDgm/ID ratios are considered. Finally, the computed results are assessed by comparing with the outcomes of electrical simulations..