| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544619 | Microelectronics Reliability | 2016 | 7 Pages |
•Harmonic distortion in asymmetric underlap DG-MOSFET•Effects of high temperature on harmonic distortion (HD) characteristics of asymmetric underlap DG-MOSFET•Effects of high temperature on HD of circuits
In this paper, the performance of asymmetric underlapped FinFETs (U-FinFETs) is analyzed for linearity and harmonic distortion at high temperatures. The harmonic distortion that arises as a result of non-linear device characteristics requires a detailed analysis for better RF reliability performance. The variations in linearity and distortion characteristics with temperature are analyzed with regards to the primary components of harmonic distortion, second order distortion (HD2), third order distortion (HD3), and the total harmonic distortion (THD). For detailed understanding of the distortion characteristics of U-FinFETs, different device parameters such as the drain current (Ids) and transconductance (gm) are also analyzed. The results of the analysis suggest that the U-FinFETs present a significant reduction in harmonic distortion at elevated temperatures under subthreshold regime and restrict the degradation in harmonic distortion in the superthreshold regime resulting in better reliability for RF applications.
