Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544624 | Microelectronics Reliability | 2016 | 4 Pages |
Abstract
•The SOI platform covered wide voltage range and better performance from 70 V to 300 V.•The platform is compatible with standard CMOS technology.•Proposed DTI structure shows larger BV capability.•300 V nLDMOS shows large enough SOA for switching applications.
A SOI platform is developed for a LDMOS transistor from 70 V to 300 V. It is one of the best cases covering the wide voltage range. By applying novel DTI technology, the pitch of a single LDMOS transistor cell is reduced. Thin silicon and oxide film help to reduce the process complexity and the cost of SOI wafer. The platform is compatible with standard CMOS technology, and is appreciable for broad power IC products.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Shuai Zhang, Hsiao-Chin Tuan, Xiao-Jing Wu, Lei Shi, Jian Wu,