Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology

The breakdown of 35 Å and 70 Å thick NMOS and PMOS silicon Gate oxides used in 1.8 V and 3.3 V BCD8 Smart Power technological node was investigated in this work. Both voltage to breakdown, from DC down to the ESD time domain, and time-dependent breakdown analysis have been carried out. We present also the evidence that breakdown is not affected by cumulative stress and it is mainly driven by voltage stress.