Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
548090 | Microelectronics Reliability | 2016 | 4 Pages |
Abstract
In this work we present an alternative method to evaluate the ability to charge trap of the thermal silicon oxide grown on n+-polysilicon in charge-coupled MOSFET devices. By interpreting the current conduction mechanism through the polysilicon-oxide by Frenkel–Poole model, we were able to evaluate and quantify the amount of charge trapped in it. We propose this approach as a very simple methodology to recognize the properties and quality of insulation of the thermal silicon oxide grown on n+-polysilicon devices.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
G. Barletta, V.C. Ngwan,