Article ID Journal Published Year Pages File Type
548096 Microelectronics Reliability 2016 5 Pages PDF
Abstract

•The standard ESD schemes are not very reliable for negative charge pumps (CPs).•Ballasting on CP switches adds to significant silicon area.•Using CP internal switches as ESD clamps provides robust protection.•Simple trigger circuits can be used to enable the clamps.•TLP measurements show that the pin can handle > 18 A, 100 ns TLP pulses.

The standard ESD protection schemes are not very reliable for negative charge pump used in Class G power amplifiers. This work presents a novel ESD protection scheme using internal charge pump switches as ESD clamps. Transmission line pulsing (TLP) measurements show that an elevated level of ESD protection can be achieved with this scheme.

Graphical abstractThe core idea of the new scheme using CP internal switches as ESD clamps.Figure optionsDownload full-size imageDownload as PowerPoint slide

Keywords
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, , , ,