Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

•We study Indium–Gallium–Zinc Oxide transistors with temperature.•An Arrhenius-type dependence is seen in the temperature range from 300 K up to 370 K.•The predominant transport mechanism observed is the Variable Range Hopping.•Modeled characteristics at different temperatures matches well the experimental ones.

The temperature dependence in the typical temperature operating range from 300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled.It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS = 10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.

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