Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6942235 | Integration, the VLSI Journal | 2018 | 8 Pages |
Abstract
In this paper, an ultra-wideband (UWB) low-noise amplifier (LNA) with low noise-figure (NF) and high power gain (S21) using 0.18-um CMOS technology is presented, which operates from 3 GHz up to 12 GHz. In the proposed amplifier, a combination of noise-canceling and current-reused technique is used to reduce noise and power consumption, while the gain and the linearity will be improved. The dominant noise source is canceled by the noise-canceling technique. In addition, good input impedance matching is achieved with using both the inductive source degeneration and resistive feedback techniques. The proposed LNA achieves high and flat S21 of 19.24-20.24 dB and S11 less than â10 dB for frequencies 3-12 GHz. Additionally, flat NF of 1.72-1.99 dB is achieved for the frequency range of 3-12 GHz. Furthermore, the IIP3 is â5.5 dBm, power consumptions at 1.8-V supply voltage is 23.23 mW and the core layout size is 857.06 µmÃ770.72 µm.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Mohsen Hayati, Sajad Cheraghaliei, Sepehr Zarghami,