| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946009 | Microelectronics Reliability | 2018 | 9 Pages |
Abstract
The results described within this paper provide an up-to-date description of the most relevant trapping processes that impact on the stability of threshold voltage and on-resistance in GaN-based transistors.
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Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
G. Meneghesso, M. Meneghini, C. De Santi, M. Ruzzarin, E. Zanoni,