| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946282 | Microelectronics Reliability | 2016 | 7 Pages |
Abstract
The validated simulation model is useful for structural parametric analysis of TSV. The proposed methodology with stress measurement by polarized Raman spectroscopy and stress analysis by simulation can be used to study the radial and axial thermal stress of other devices.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Wei Feng, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi,