| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946389 | Microelectronics Reliability | 2016 | 7 Pages |
Abstract
The results presented within this paper provide an up-to-date overview of the main advantages and limitations of GaN-based MIS HEMTs for power applications, on the related characterization techniques and on the possible strategies for improving device performance and reliability.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni,