Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946670 | Microelectronics Reliability | 2015 | 4 Pages |
Abstract
Gate oxide rupture is a major concern in IC failure reliability, especially as latent wafer fab defect is difficult to screen out at component testing. Failure Analysis is key in improving product quality as it allows understanding the failure root cause in order to establish manufacturing corrective actions. Three automotive components Failure Analysis cases dealing with different types of latent gate oxide defects will be presented as well as the associated correctives actions.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
J. Goxe, C. Abouda, B. Vanhuffel,