| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6946852 | Microelectronics Reliability | 2014 | 4 Pages |
Abstract
Calculations and measurement results on an exemplary floating gate memory cell show intact cell structure with limited retention time after FIB modification. The presented procedure allows the measurement and control of the previously unavailable floating gate current and voltage.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Clemens Helfmeier, Rudolf Schlangen, Christian Boit,