Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6946858 | Microelectronics Reliability | 2014 | 5 Pages |
Abstract
In this paper, the impact of the gate drive voltage on avalanche capability of Trench-IGBTs is deeply analyzed by means of infrared (IR) thermal measurements and TCAD simulations during Unclamped Inductive Switching (UIS) test. The reported results are carried out for a case study on a 1.2Â kV - 200Â A rated device. Experimental results show the effect of the gate drive voltage during avalanche operation. A possible non-uniform current conduction for unipolar gate-driver case is proven using transient thermal maps. As a consequence, the dependence of the actual breakdown voltage (VBR) of the device active area with a negative gate biasing is investigated for trench structures. A reduction of the VBR and a slighter interplay between the T-IGBT cells and the termination area is demonstrated for a negative gate bias during the blocking state using ad-hoc TCAD electro-thermal simulations. Finally, the boosted avalanche capability is proven for under-biased case and a theoretical explanation of the involved phenomena is provided.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Riccio, L. Maresca, A. Irace, G. Breglio, Y. Iwahashi,