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Modern Electronic Materials - Volume 2 - Issue 2 

Trends in the development of the epitaxial nitride compounds technology
Fulltext Access 18 Pages 2016
Investigation of CaMoO4 single crystals with low residual absorption
Fulltext Access 11 Pages 2016
Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers
Fulltext Access 5 Pages 2016
DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions
Fulltext Access 7 Pages 2016
Study of structure and surface morphology of two-layer contact Ti/Al metallization
Fulltext Access 15 Pages 2016

Volumes

  • Volume 3 - Issue 4  - (9 articles)
  • Volume 3 - Issue 3  - (7 articles)
  • Volume 3 - Issue 2  - (6 articles)
  • Volume 3 - Issue 1  - (5 articles)
  • Volume 2 - Issue 4  - (7 articles)
  • Volume 2 - Issue 3  - (7 articles)
  • Volume 2 - Issue 2  - (5 articles)
  • Volume 2 - Issue 1  - (6 articles)
  • Volume 1 - Issue 4  - (5 articles)
  • Volume 1 - Issue 3 - (5 articles)
  • Volume 1 - Issue 2 - (6 articles)
  • Volume 1 - Issue 1 - (5 articles)
Title
Modern Electronic Materials
Modern Electronic Materials
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