Modern Electronic Materials - Volume 2 - Issue 1 

Nitride HEMTs vs arsenides: The ultimate battle?

Fulltext Access 6 Pages 2016

X-ray topographic study of defects in Si-based multilayer epitaxial power devices

Fulltext Access 6 Pages 2016

High resolution X-ray diffraction study of proton irradiated silicon crystals

Fulltext Access 4 Pages 2016

Oxygen and erbium distribution in diffusion doped silicon

Fulltext Access 6 Pages 2016

The simulation of carbon material structure based on polyacrylonitrile obtained under IR heating

Fulltext Access 5 Pages 2016

Finely divided methylsilsesquioxane particles with SiO4/2 fragments in structure

Fulltext Access 5 Pages 2016