| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10364409 | Microelectronic Engineering | 2011 | 5 Pages |
Abstract
Regarding the device performance, it is observed that drain current drivability of MGSFET is about four times worse than that of conventional MOSFET. It is speculated that the inferiority is caused by the permittivity difference between SiO2 and air. While, the gate leakage current of MOSFET obviously becomes worse after the catastrophic breakdown, but that of MGSFET becomes much better than before in forced breakdown of gate insulation. In this first trial of MGSFET implementation, the forced breakdown simultaneously degrades normal transistor performance. Further investigation should be made to analyze what is going on MGSFET structure.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yoichi Ashida, Kiyoshi Okuyama, Hideo Sunami,