Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10364416 | Microelectronic Engineering | 2011 | 8 Pages |
Abstract
In this work we demonstrate the fabrication and characterization of high performance junction diodes using annealing temperatures within the temperature range of 300-350 °C. The low temperature dopant activation was assisted by a 50 nm platinum layer which transforms into platinum germanide during annealing. The fabricated diodes exhibited high forward currents, in excess of 400 A/cm2 at â¼|0.7| V for both p+/n and n+/p diodes, with forward to reverse ratio IF/IR greater than 104. Best results for the n+/p junctions were obtained at the lower annealing temperature of 300 °C. These characteristics compare favorably with the results of either conventional or with Ni or Co assisted dopant activation annealing. The low-temperature annealing in combination with the high forward currents at low bias makes this method suitable for high performance/low operating power applications, utilizing thus high mobility germanium substrates.
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Authors
V. Ioannou-Sougleridis, S.F. Galata, E. Golias, T. Speliotis, A. Dimoulas, D. Giubertoni, S. Gennaro, M. Barozzi,