| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10364426 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
A new method of surface passivation of PbSe epitaxial layers by growing a thin epitaxial CaF2 layer is proposed. Improvement in photoluminescence (PL) intensity is observed when the PbSe layer is passivated. The minority carrier lifetime (Ï), measured by photo-current decay method corroborates PL measurements and shows a consistent, albeit not considerable, improvement in the lifetime of PbSe samples after surface passivation. The positive effect of surface passivation, especially at low heat-sink temperature, offered by a new passivating material is critically important for IV-VI material-based infrared detector and sensor applications.
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Authors
Shaibal Mukherjee, D. Li, G. Bi, J. Ma, S.L. Elizondo, A. Gautam, Z. Shi,